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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA971 DESCRIPTION *With TO-3 package *Excellent safe operating area APPLICATIONS *For high power audio ,stepping motor and other linear applications *Relay or solenoid drviers *DC-DC converters inverters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -6 -15 -5 150 150 -65~200 UNIT V V V A A W PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.98 UNIT /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-10A; IB=-1A VCB=-150V; IE=0 VEB=-6V; IC=0 IC=-5A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-10V 30 270 10 MIN -150 -150 -6 TYP. 2SA971 MAX UNIT V V V -3.0 -0.1 -0.1 V mA mA pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA971 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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